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ECN publication
Title:
Passivating mc-Si solar cells using SiNx:H: Magic or Physics
 
Author(s):
Romijn, I.G.; Soppe, W.J.; Rieffe, H.C.; Burgers, A.R.; Weeber, A.W.
 
Published by: Publication date:
ECN Solar Energy 1-6-2005
 
ECN report number: Document type:
ECN-RX--05-007 Conference Paper
 
Number of pages: Full text:
4 Download PDF  

Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.

Abstract:

Bulk passivation with SiNx:H has been so far a barely understood effect that can only be optimized for cell production in an empirical way. In this study we determine the structural properties of SiNx:H layers and relate these to both the deposition parameters and its passivating qualities for solar cells. These structural properties, such as Si-N and Si-H bond densities, of the SiNx:H layers deposited with either N2, NH3 or ND3 and silane are measured with FTIR. We show that Si-N bond density is an important parameter governing both the bulk and surface passivation of


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