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Title:
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Range of loss mechanisms accessible by illuminated lock-in thermography (ILIT)
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-6-2005
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ECN report number:
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Document type:
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ECN-RX--05-035
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.
Abstract:
Illuminated Lock-In Thermography (ILIT) was introduced as a further
development of Dark Lock-In
Thermography (DLIT) in 2004 and allows to measure under conditions considerably
closer to real operation conditions of
solar cells. Recently, a number of different modes were developed, that
differ in the measurement conditions chosen.
This contribution investigates favorable measurement conditions for
the most important parameters of a solar cell. It will be
shown that adapted modes of Lock-In Thermography are well suited for
the investigation of linear and non-linear shunts,
bulk material quality and losses due to series resistance as e.g. contact
resistance and inappropriate metalization patterns.
Bulk material quality is best investigated under open circuit conditions
(V
OC-ILIT), whereas series resistance problems
dominate the Thermography image under short circuit conditions (J
SC-ILIT). Shunts on the other hand tend to dominated the
measurement at intermediate to high voltages, thus offering the possibility
to distinguish between losses due to shunting and
due to series resistance. Finally, good agreement between contact resistance
images obtained by J
SC-ILIT and emitter
potential maps obtained by Corescan is demonstrated.
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