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Title:
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Open-rear side H-pattern optimization based on 2D computer simulations
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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30-5-2008
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ECN report number:
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Document type:
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ECN-M--08-035
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Conference Paper
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Number of pages:
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Full text:
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6
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Download PDF
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Presented at: 33rd IEEE Photovoltaic Specialists Conference, San Diego, USA, 11-16 mei 2008.
Abstract:
Currently, photovoltaic-cell manufacturers are tending to use thinner wafers in order to reduce material costs. However, thin wafers that have a full aluminum (Al) rear coverage suffer from bowing and therefore have an increased chance of breakage. Another consequence of the thinner wafer is that the surface recombination velocity (SRV) of the rear side is getting more important for the overall cell performance. To overcome these problems one could use an open rear side (i.e. partial metal coverage) and passivate the wafer rear surface. In this paper, we will focus on an Al H-patterned rear metallization with two bus bars. The aim thereby is to attempt a first validation of the solar cell simulation software package Microtec against experiments and to get a better physics understanding of the open rear side cell. We performed a parameter study, where we calculated the standard output parameters like shortcut current (Isc), open-circuit voltage (Voc) and fill factor (FF) for varying cell parameters. The parameter space that has been explored is composed of the finger pitch, the finger width, the back surface field (BSF) depth, the Al doping concentration in the BSF and the surface recombination velocity (SRV) of the SiNx in between the contacts.
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