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Title:
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Innovative diffusion processes for improved efficiency on industrial solar cells approached by doping profile manipulation
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Author(s):
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Komatsu, Y.; Galbiati, G.; Lamers, M.W.P.E.; Venema, P.; Harris, M.; Stassen, A.F.; Meyer, C.; Donker, M.N. van den; Weeber, A.W.
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Published by:
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Publication date:
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ECN
Solar Energy
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21-9-2009
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ECN report number:
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Document type:
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ECN-M--09-027
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Conference Paper
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Number of pages:
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Full text:
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5
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Download PDF
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Presented at: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.
Abstract:
Manipulation of the doping profile of phosphorus emitters in silicon solar cells is demonstrated in an industry-applicable process. By changing the diffusion temperature—time (T-t) curve without increasing process time, the surface phosphorus concentration has been reduced resulting in an efficiency gain of 0.2% absolute. In addition, batch quartz tube furnace with gaseous dopant source and inline conveyor furnace with liquid dopant source were fairly compared by introducing an artificial process recipe with an identical T-t curve for each furnace. This comparison shows that the open circuit voltage is independent of the diffusion furnace type. This suggests that crucial factor regarding emitter quality is a lower process temperature and increased process time rather than diffusion furnace choice.
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