ECN publication
Title:
Sophistication of doping profile manipulation - emitter performance improvement without additional process step
 
Author(s):
Komatsu, Y.; Stassen, A.F.; Venema, P.; Vlooswijk, A.H.G.; Meyer, C.; Koorn, M.
 
Published by: Publication date:
ECN Solar Energy 6-9-2010
 
ECN report number: Document type:
ECN-M--10-021 Conference Paper
 
Number of pages: Full text:
6 Download PDF  

Presented at: 25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 6-10 september 2010.

Abstract:
We have improved the emitter formation process by manipulating the phosphorus doping profile without increasing the total process time or adding any extra steps, but by just implementing a simple steam generator into the POCl3 diffusion furnace. An average efficiency gain of 0.3% absolute was achieved with multicrystalline silicon solar cells. In this study, we statistically clarify which direction the doping profile should be manipulated. Merely characterizing the emitter by “high sheet resistance” or “shallow emitter” is revealed to be no longer indicative for high efficiency. We also demonstrate the sophistication of the doping profile manipulation with numerical analysis.


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