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ECN publication
Title:
Emitter diffusion using an IR belt furnace
 
Author(s):
Goris, M.J.A.A.; Moor, H.H.C. de; Weeber, A.W.; Kossen, E.J.; Beeke, H.G. ter; Frisson, L.; Szlufcik, J.
 
Published by: Publication date:
ECN Solar Energy 1998
 
ECN report number: Document type:
ECN-RX--98-031 Article (scientific)
 
Number of pages:
6  

Published in: Paper, presented at the 2nd World conference and exhibition on photovoltaic solar energy conversion, Vienna, Austria, 06-10 July (), , , Vol., p.-.

Abstract:
A new approach for emitter diffusion in the processing scheme ofmulticrystalline silicon solar cells is presented. An IR heated belt furnace is used to enhance the diffusion process. The diffusion time is decreased by 50% at 935C and 25% at 920C compared with a resistance heated belt furnace which is traditionally used. Similar emitter profiles, cell performances and internal quantum efficiencies can be obtained using an IR heated or a conventional resistance heated belt furnace. This indicates that the material quality of the cells as well as the electrical contact with the cell is not affected by the diffusion process. In addition, the gas atmosphere was varied. Changing from nitrogen, which is conventionally used, to air resulted in comparable emitter profiles and cell characteristics. 5 refs.


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