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Title:
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Silicon solar cells textured by low damage RIE with natural lithography
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2002
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ECN report number:
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Document type:
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ECN-RX--02-020
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.
Abstract:
RIE with natura1 lithography has two advantages over RIE with automasking:the process causes less surface damage and the process window is broader.
We have
systematically explored the parameter range of our process and identified
a natura1 lithography RIE process which causes a minimum amount of surface
damage. By using this RIE process and a wet chemical etch of a few nanometers,
we reached a gain in shortcircuit current of 2.9% and no loss in open
circuit voltage. This resulted in an absolute efficiency gain of 0.6%
for the RIE textured wafers.
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