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ECN publication
Title:
Locating losses due to contact resistance, shunts and recombination by potential mapping with the Corescan
 
Author(s):
Heide, A.S.H. van der; Bultman, J.H.; Hoornstra, J.; Schönecker, A.; Wyers, G.P.; Sinke, W.C.
 
Published by: Publication date:
ECN Solar Energy 1-9-2002
 
ECN report number: Document type:
ECN-RX--02-039 Conference Paper
 
Number of pages: Full text:
10 Download PDF  

Presented at: 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge CO, USA, 11-14 augustus 2002.

Abstract:
A visualization tool to locate losses in a solar cell can bevery helpful in troubleshooting a non-optimal production line. Therefore, the Corescan has been developed, in which three different locating methods are incorporated, the Corescan, Shuntscan and the new Voc scan. In this paper it is explained how the scan results have to be interpretated and it it is shown that the sensitivity of the methods is more than sufficient. The unique Voc scan method is introduced for the first time; this technique can locate recombination losses on cells that are almost complete (only the front contact has to be omitted). Several examples of how the Corescan instrument can be used for troubleshooting and process optimization are presented in this paper. These examples will help users of the instrument to relate measured scans with reasons for non-optimal processing.


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