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ECN publication
Title:
Impact of defect distribution and impurities on multicrystalline silicon cell efficiency
 
Author(s):
Geerligs, L.J.
 
Published by: Publication date:
ECN Solar Energy 1-5-2003
 
ECN report number: Document type:
ECN-RX--03-016 Conference Paper
 
Number of pages: Full text:
4 Download PDF  

Presented at: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.

Abstract:
The material properties of several commerciallyavailable multicrystalline silicon ingots are analysed, and their relation with cell efficiency is evaluated. Three aspects are clearly correlated to the cell results. i) Fe contamination, in particular the excessive contamination at the edge of ingots; ii) oxygen contamination, deteriorating the properties in the bottom of some ingots, and iii) distribution of minority carrier lifetime in wafers, which is correlated to the crystal defect density. With consideration of these aspects, the variation of cell properties within an ingot, and to a lesser extent between ingots, can be understood.


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