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Title:
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Hight-quality mc-Si wafers for high-efficiency solar cells
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Author(s):
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Weeber, A.W.; Goris, M.J.A.A.; Geerligs, L.J.; Tathgar, H.; Gjerstad, Ø.; Huster, F.; Terheiden, B.; McCann, M.; Fath, P.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-6-2004
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ECN report number:
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Document type:
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ECN-RX--04-063
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.
Abstract:
High
purity feedstock was used by ScanWafer to make high-quality
mc-Si wafers. These wafers were characterized in detail by ECN and UKON.
The initial lifetime of minority carriers over the ingot varied from
about 10 to about 100 ms. The
interstitial oxygen and substitutional carbon concentrations are below
10 ppma and that low concentration will hardly affect the lifetime in
the material and the solar cell output. Standard firing-through SiNx:H
cell processing resulted in efficiencies from 15 to 16%. Advanced in-line
processing resulted in an maximum efficiency of 16.5%. The lifetime
after cell processing was 75-150 µs. Modelling shows that this lifetime
hardly limits the efficiency and efficiencies above 17% are possible.
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