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Title:
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Spectroscopical and electrical characterization of n-type multicrystalline silicon
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Author(s):
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Acciarri, M.; Binetti, S.; Le Donne, A.; Marchionna, S.; Pizzini, S.; Libal, J.; Kopecek, R.; Fath, P.; Geerligs, L.J.; Wambach, K.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-6-2005
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ECN report number:
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Document type:
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ECN-RX--05-012
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.
Abstract:
This paper deals with a systematic
investigation of the defect features associated to microstructure disorder
and to impurities contamination of n-type mc-Si ingots. A systematic comparison
of the electrical properties with the radiative and non-radiative defect
recombination activity was carried out using photoluminescence and Electron
Beam Induced Current techniques (EBIC). This allowed us to identify the optically active
defects responsible for the wafer quality losses, mainly dislocations
and precipitates. Changes in defect activity after different process
steps were also studied. EBIC maps showed a low density of these electrically
active defects with low recombination strength. All the electrical and
optical analyses confirm the good quality properties of n-type multicrystalline
silicon. As we expected, solar
cells processed using this material have shown good efficiencies close
to 15% as reported in another work submitted to this conference [1]
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