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Title:
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Carrier lifetime studies of strongly compensated p-type Czochralski silicon
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Author(s):
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Macdonald, D.; Cuevas, A.; Di Sabatino, M.; Geerligs, L.J.
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Published by:
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Publication date:
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ECN
Solar Energy
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17-10-2008
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ECN report number:
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Document type:
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ECN-M--08-070
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Conference Paper
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Number of pages:
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Full text:
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7
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Download PDF
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Presented at: 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, 1-5 september 2008.
Abstract:
Carrier lifetimes have been measured in compensated p-type single-crystal silicon wafers. Trace amounts of interstitial iron were found to provide a convenient method for measuring the total concentrations of acceptors and donors in this material, based on measuring the repairing rate of iron-acceptor pairs, coupled with resistivity measurements and a suitable mobility model. The results were found to be in good agreement with dopant concentrations measured independently by glow-discharge mass spectrometry. In addition, there appears to be a reduction in the bulk lifetime in compensated wafers when compared to non-compensated wafers of similar net doping. Possible mechanisms behind this reduction are discussed. Keywords: silicon, doping, recombination, compensation.
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