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Title:
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Homogeneous p+ emitter diffused using boron tribromide for record 16.4% screen-printed large area n-type mc-Si solar cell
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Author(s):
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Komatsu, Y.; Mihailetchi, V.D.; Geerligs, L.J.; Dijk, B. van; Rem, J.B.; Harris, M.
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Published by:
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Publication date:
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ECN
Solar Energy
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3-11-2008
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ECN report number:
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Document type:
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ECN-W--09-014
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Article (scientific)
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Number of pages:
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3
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Published in: Solar Energy Materials & Solar Cells (Elsevier), , 2009, Vol.93, p.750-752.
Abstract:
A record efficiency of 16.4% (156.25 cm2) has been achieved for an n-type wafer-based (hereafter, "n-based") mc-Si solar cell. A horizontal quartz tube furnace with an industry-compatible scale is employed for forming a p+-emitter using boron tribromide (BBr3) as the boron source, in which system less contamination is confirmed than in other options of boron diffusion. A significantly homogeneous emitter is achieved with the standard deviation of 1.5 -/sq. n-Based mc-Si solar cells are fabricated with phosphorus-diffused BSF, SiN deposition, and fire-through screen-printed contacts. The properties of the best cell are; n: 16.4%, Voc: 607 mV, Jsc: 35.2 mA/cm2, and FF: 76.7%
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