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Title:
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Passivation of Highly Boron Doped Silicon Surfaces by Sputtered AlOx and PECVD SiN, a Comparison
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Author(s):
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Li, T.T.A.; Cuevas, A.; Tan, J.; Samundsett, C.; Oosterling - Saynova, D.S.; Geerligs, L.J.
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Published by:
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Publication date:
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ECN
Solar Energy
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12-12-2010
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ECN report number:
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Document type:
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ECN-M--10-067
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Conference Paper
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Number of pages:
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Full text:
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2
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Download PDF
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Presented at: Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, Australia, 12-15 december 2010.
Abstract:
We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an op-timised PECDV SiN process that in-cludes a chemically grown SiO2 interfa-cial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88–210 O/?, are already consistent with solar cell with efficiencies in the 20% range.
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