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Title:
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Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells
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Author(s):
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Bertoni, M.I.; Hudelson, S.; Newman, B.K.; Fenning, D.P. ; Dekkers, H.F.W.; Cornagliotti, E.; Zuschlag, A.; Micard, G.; Hahn, G.; Coletti, G.; Lai, B.; Buonassisi, T.
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Published by:
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Publication date:
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ECN
Solar Energy
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7-12-2010
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ECN report number:
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Document type:
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ECN-W--10-061
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Article (scientific)
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Number of pages:
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5
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Published in: Progress in Photovoltaics: Research and Applications (John Wiley & Sons Ltd.), , 2010, Vol.published online November 24, p.-.
Abstract:
We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiNx-coated stripes using laser-beam-induced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate pre- and post-hydrogenation recombination activity with GB character, density of iron-silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role.
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