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Title:
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Progress in low-cost n-type silicon solar cell technology
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Author(s):
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Geerligs, L.J.; Romijn, I.G.; Burgers, A.R.; Guillevin, N.; Weeber, A.W.; Bultman, J.H.; Wang, Hongfang; Fang, Lang; Wenchao, Zhao; Gaofei, Li ; Zhiyan, Hu ; Jingfeng, Xiong ; Vlooswijk, A.H.G.
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Published by:
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Publication date:
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ECN
Solar Energy
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3-6-2012
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ECN report number:
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Document type:
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ECN-M--12-020
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Abstract:
This article will review our recent progress in development of high-efficiency cells on n-type monocrystalline Si wafers. With boron-doped front emitter, phosphorous BSF, and screen-printed metallisation, at this moment such cells reach an efficiency of over 19%. We describe recent results of processing with reduced front contact area, and improved BSF and improved rear surface passivation, which are key parameters that limit the cell efficiency. The improved processing leads to an efficiency of 20%. The cell process has also been adopted for
fabrication of metal-wrap-through back-contact cells. Without the improved contact recombination and BSF, an MWT cell efficiency of 19.7% is reached, 0.3% higher than the corresponding ‘standard’ (non-back-contact) cells.
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