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Title:
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On the transient negative photoconductance in n-type Czochralski silicon
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Author(s):
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Zhu, Y.; Juhl, M.K.; Coletti, G.; Hameiri, Z.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-3-2018
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ECN report number:
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Document type:
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ECN-W--17-022
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Article (scientific)
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Number of pages:
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7
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Published in: IEEE Journal of Photovoltaics (IEEE), , 2018, Vol.Vol.8, p.421-427.
Abstract:
A transient negative photoconductance phenomenon
is observed in n-type Czochralski silicon wafers. After a pulsed
light excitation, the measured photoconductance drops to negative
values and then increases to the original zero. The paper details how
transient negative photoconductance is predicted by the Shockley–
Read–Hall rate equations for a system of two defects. For this to
occur, one defect must act as a majority carrier trap, and the other
must be a relatively faster recombination channel. The specific
conditions of these defects for a negative photoconductance to occur
are derived analytically. Numerical modeling of this system shows
good agreement with the experimental results. Finally, a method to
extract the trap parameters from negative photoconductance for
a sample with temperature-independent capture cross sections is
demonstrated.
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