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Title:
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Carrier induced degradation in multicrystalline silicon: Dependence on the silicon nitride passivation layer and hydrogen released during firing
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Author(s):
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Vargas, C.; Kim, Kyung; Coletti, G.; Payne, D.; Chan, C.; Wenham, Stuart; Hameiri, Z.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-3-2018
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ECN report number:
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Document type:
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ECN-W--17-023
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Article (scientific)
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Number of pages:
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8
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Published in: IEEE Journal of Photovoltaics (IEEE), , 2018, Vol.Vol.8, p.413-420.
Abstract:
Carrier-induced degradation (CID) of multicrystalline
silicon (mc-Si) solar cells has been receiving significant attention;
however, despite this increasing interest, the defect (or
defects) responsible for this degradation has not been determined
yet. Previous studies have shown that the surface passivation layer
and the firing temperature have a significant impact on the rate
and extent of this degradation. In this paper, we further study this
impact through an investigation of the CID behavior of the mc-Si
wafers passivated with six different silicon nitride layers, each fired
at four different peak temperatures. At low firing temperatures, no
significant difference in the CID was identified between the samples
with different passivation layers; however, a large range of
degradation extents was observed at higher firing temperatures.
Using Fourier transform infrared spectroscopy, a correlation was
found between the degradation extent and the amount of hydrogen
released from the dielectric during firing. We verified that no
degradation of the surface passivation quality occurred, indicating
that the degradation is primarily associated with a bulk defect.
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