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ECN publication
PECVD deposition of a-Si:H and uc-Si:H using linear RF source
Published by: Publication date:
ECN Solar Energy 14-3-2007
ECN report number: Document type:
ECN-M--07-035 Conference Paper
Number of pages: Full text:
8 Download PDF  

Presented at: SPIE Symposium, San Diego, USA, 26-30 augustus 2007.

ECN is aiming at the development of fabrication technology for roll-to-roll production lines for high efficiency thin film amorphous and microcrystalline silicon solar cells. The intrinsic layer will be deposited with high deposition rate microwave plasma enhanced chemical vapour deposition. This plasma source, however, is not suitable for the deposition of doped layers. Therefore, we use a novel, linear RF source for the deposition of doped layers. In this RF source, the substrate is electrically disconnected from the RF network. As a result, the ion bombardment onto the substrate is very mild, with ion energies typically < 10 eV. The low ion energies make this source very attractive for surface treatments like passivation of crystalline silicon wafers by thin SiNx or a-Si layers. In this contribution, we will introduce the novel RF source and discuss the deposition of device quality amorphous and microcrystalline intrinsic Si layers with the novel linear RF source.

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