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ECN publication
Development of n-type silicon heterojunction solar cells by using novel linear remote rf PECVD a-Si:H deposition
Published by: Publication date:
ECN Solar Energy 6-9-2010
ECN report number: Document type:
ECN-M--10-012 Conference Paper
Number of pages: Full text:
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Presented at: 25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 6-10 september 2010.

We report on n-type silicon heterojunction (SHJ) solar cells made using novel pilot scale deposition equipment. We investigated the possibility to apply a simplified cell structure without a passivating intrinsic amorphous silicon buffer layer [a-Si:H(i)]. The doped amorphous silicon layers [a-Si:H (n/p)] were deposited by using a novel remote plasma enhanced chemical vapor deposition system (PECVD) with a linear radio frequency (rf) source. Processes for thin (10-20nm) doped a-Si:H layers with useful conductivity and surface passivation were developed and applied in the formation of the SHJ cell. A total recombination velocity of less than 40 cm/s on (100) surface was obtained. An efficiency of 13.2% of several untextured SHJ cells with an area of 21.1cm2 was established.

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