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ECN publication
LPE-deposition of crystalline silicon layers on recrystallised silicon-based ceramics
Published by: Publication date:
ECN Solar Energy 1-5-2000
ECN report number: Document type:
ECN-RX--00-022 Conference Paper
Number of pages: Full text:
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Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

Recrystallisation of (thick) silicon layers can be accomplished without acapping layer. However, a substantial part of the recrystallised layer is highly defected, and has to be removed before a closed layer can be deposited on it by LPE. By tuning the cooling trajectory, the in LPE well known 'grain boundary effect' can be reduced, although we did not yet succeed in completely prohibiting the groove formation. Also, the use of metallurgical grade silicon in the nucleation layer resulted in pinholes in the LPE grown active layer. 8 refs.

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