|
Title:
|
|
LPE-deposition of crystalline silicon layers on recrystallised silicon-based ceramics
|
|
|
|
Author(s):
|
|
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-5-2000
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--00-022
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
3
|
Download PDF
|
Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
Abstract:
Recrystallisation of (thick) silicon layers can be accomplished without acapping layer. However, a substantial part of the recrystallised layer is
highly defected, and has to be removed before a closed layer can be deposited
on it by LPE. By tuning the cooling trajectory, the in LPE well known 'grain
boundary effect' can be reduced, although we did not yet succeed in
completely prohibiting the groove formation. Also, the use of metallurgical
grade silicon in the nucleation layer resulted in pinholes in the LPE grown
active layer. 8 refs.
Back to List