|
Title:
|
|
Barrier layers deposited at low temperature on metal carrier foil for the use of uc-Si solar cells
|
|
|
|
Author(s):
|
|
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-10-2005
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--05-107
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
2
|
Download PDF
|
Presented at: 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, Shanghai, China, 10-15 oktober 2005.
Abstract:
Barrier layer material deposited on stainless
steel substrate has been under investigation. These layers are part
of a film-Si module, presently under development at ECN. Low temperature
(< 250°C) processing is required in order to avoid impurity diffusion
from the stainless steel foil. Novel materials based on nano particles
combined with organic/ inorganic polymers and SiOx precipitated
from the liquid phase have been deposited onto stainless steel foil.
Nano particles with organic/ inorganic polymers reveal homogenous layers
with voltage breakdown values exceeding 500 V. To test the functionality
of the concept, thin-film Si solar cells are planned to be prepared
by VHF-PECVD in combination with the different barrier layers.
Back to List