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Title:
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Large area deposition of microcrystalline silicon by microwave PECVD
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-9-2005
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ECN report number:
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Document type:
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ECN-RX--05-150
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 21st International Conference on Amorphous and Nanocrystalline Semiconductors - ICANS 21, Lisbon, Portugal, 5-9 september 2005.
Abstract:
Intrinsic
microcrystalline and amorphous silicon layers have been deposited by
Microwave PECVD on glass substrates under variation of the silane to
hydrogen ratio. A series of samples deposited at higher total pressure
and with lower microwave power than previously applied is presented. The plasma was studied by means of optical emission spectroscopy.
With increasing silane fraction, the silane utilization as well as the
Há/SiH* ratio in the plasma decrease, and the
layers become more amorphous. The hydrogen content in the film and the
refractive index of the material at 0.5 eV, an indicator for the density
of the films, increase with increasing silane fraction. The higher total
pressure and lower microwave power during deposition resulted in a strong
improvement in the structural and opto-electrical properties of microcrystalline
and amorphous silicon layers. The best amorphous layers have ódark of 6*10-10 S/cm,
óph/ódark of 6*104, R* below 0.1, and an Urbach
tail Energy of 55 meV. For the microcrystalline layers close to
the ìc-Si/a-Si transition,
ódark of 1*10-6
S/cm, óph/ódark of 16, and an Urbach tail Energy of
107 meV have been achieved.
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