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ECN publication
N-type solar grade silicon for efficient p+n solar cells: overview and main results of the EC NESSI project
Published by: Publication date:
ECN Solar Energy 11-9-2006
ECN report number: Document type:
ECN-RX--06-021 Conference Paper
Number of pages: Full text:
4 Download PDF  

Presented at: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.

An integrated R&D effort was performed, aimed at the industrial use of highly n-doped waste silicon, and at processing of this silicon to n-doped ingots, solar cells, and modules. An evaporation process was successfully applied to reduce the phosphorous concentration in the waste Si. Additional experimental n-type ingots were produced by blending (highly doped with undoped) silicon. Industrial p+nn+ cell processes were developed with a front boron emitter and, alternatively, a rear aluminium emitter. A high and homogeneous carrier lifetime was observed in the n-type mc-Si which makes the material suitable even for a rear emitter process. Solar cell efficiencies of 14.7% (front emitter) and 14.4% (rear emitter) were obtained on mc-Si; while more than 16% efficiency was demonstrated on monocrystalline wafers. Cell interconnection by conductive adhesive was developed and performs well.

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