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Title:
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Bulk and surface passivation by silicon nitride grown by microwave enhanced PECVD
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Author(s):
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Soppe, W.J.; Devilee, C.; Schiermeier, S.E.A.; Weeber, A.W.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de; Arnoldbik, W.M.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-10-2001
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ECN report number:
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Document type:
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ECN-RX--01-022
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 17th European Photovoltaic Solar Energy Conference, Munich, Germany, 22-26 oktober 2001.
Abstract:
Surface and bulk passivating properties of SiNx:H layers deposited by Remote Microwave PECVD are investigated. We found that the N/Si ratio of the layers is dependent of the substrate temperature, which suggests that the layer growth is dominated by the arrival of separate SiH and NH species at the surface and not by the arrival of SiNxHy clusters formed in the plasma. SiNx:H layers with good surface passivating properties require different deposition conditions than layers with good bulk passivating properties. For good surface passivation, Si-rich layers are needed with relatively low H-concentrations. For layers which can provide good hydrogenation through firing, more stoichiometric and hydrogen rich layers are required in which the hydrogen is predominantly bonded to N-atoms. For p-type mc-Si Baysix wafers we found that SiNx:H induced hydrogenation can improve the bulk lifetime of charge carriers by more than 20 %. No synergistic effects of an Al BSF on this hydrogenation process, however,were observed.
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