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Title:
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Optical and structural properties of microcrystalline silicon, grown by microwave PECVD
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-6-2005
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ECN report number:
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Document type:
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ECN-RX--05-003
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.
Abstract:
We investigated
the deposition of mc-Si by microwave PECVD. MWPECVD is an excellent tool for fast deposition
of silicon at low temperatures; however, this fast growth is often accompanied
by high porosity. In order to obtain dense Si layers we investigated
a wide deposition parameter space, where we systematically varied substrate temperature
Ts, pressure p, total flow Ftot, flow ratio FSiH4/FH2 and microwave power
PMW. We identified a deposition regime for growth
of dense mc-Si layers. Main characteristics
of this regime are high substrate temperatures (300 ºC) and a reduced
microwave power. Silicon layers grown in this regime have a refractive
index above 3.0, showing that the porosity of the layers is low. Opto-electronic
characterization shows that the layers already fulfill most requirements
for absorber layers in thin film silicon solar cells
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