ECN publication
Optical and structural properties of microcrystalline silicon, grown by microwave PECVD
Soppe, W.J.; Muffler, H.J.; Biebericher, A.C.W.; Devilee, C.; Burgers, A.R.; Poruba, A.; Hodakova, L.; Vanecek, M.
Published by: Publication date:
ECN Solar Energy 1-6-2005
ECN report number: Document type:
ECN-RX--05-003 Conference Paper
Number of pages: Full text:
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Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.

We investigated the deposition of mc-Si by microwave PECVD.  MWPECVD is an excellent tool for fast deposition of silicon at low temperatures; however, this fast growth is often accompanied by high porosity. In order to obtain dense Si layers we investigated a wide deposition parameter space, where we systematically varied substrate temperature Ts, pressure p, total flow Ftot, flow ratio FSiH4/FH2 and microwave power PMW. We identified a deposition regime for growth of dense mc-Si layers. Main characteristics of this regime are high substrate temperatures (300 ºC) and a reduced microwave power. Silicon layers grown in this regime have a refractive index above 3.0, showing that the porosity of the layers is low. Opto-electronic characterization shows that the layers already fulfill most requirements for absorber layers in thin film silicon solar cells

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