ECN publication
Large area, high rate deposition of uc-Si by MicroWave PECVD
Soppe, W.J.; Devilee, C.; Muffler, H.J.; Gajovic, A.; Dubcek, P.; Gracin, D.
Published by: Publication date:
ECN Solar Energy 1-10-2005
ECN report number: Document type:
ECN-RX--05-108 Conference Paper
Number of pages: Full text:
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Presented at: 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, Shanghai, China, 10-15 oktober 2005.


MicrowavePECVD has been applied to grow intrinsic microcrystalline (mc-Si ) and amorphous silicon (a-Si ) layers for solar cell applications in a relatively low growth rate regime (0.1 - 0.3 nm/s). In this growth rate regime optically dense layers can be produced, which are entirely microcrystalline for silane fractions less than 5 % and which are amorphous for larger silane fractions. The best amorphous layers have an optical bandgap of about 1.6 eV and a structure factor R* of about 0.1, Urbach energy EU of about 55 meV and sph/sd in the range of 5×104. Best microcrystalline layers, grown at a silane fraction of about 5 %, have an Urbach energy of 107 meV and sph/sd in the range of 5×102.

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