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Title:
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N-type solar grade silicon for efficient p+n solar cells: overview and main results of the EC NESSI project
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Author(s):
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Geerligs, L.J.; Tool, C.J.J.; Kinderman, R.; Röver, I.; Wambach, K.; Kopecek, R.; Buck, T.; Libal, J.; Petres, R.; Fath, P.; Sánchez-Friera, P.; Alonso, J.; Acciarri, M.; Binetti, S.; Pizzini, S.
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Published by:
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Publication date:
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ECN
Solar Energy
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11-9-2006
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ECN report number:
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Document type:
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ECN-RX--06-021
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.
Abstract:
An integrated R&D effort was performed, aimed at the industrial use of highly n-doped waste silicon, and at processing of this silicon to n-doped ingots, solar cells, and modules. An evaporation process was successfully applied to reduce the phosphorous concentration in the waste Si. Additional experimental n-type ingots were produced by blending (highly doped with undoped) silicon. Industrial p+nn+ cell processes were developed with a front boron emitter and, alternatively, a rear aluminium emitter. A high and homogeneous carrier lifetime was observed in the n-type mc-Si which makes the material suitable even for a rear emitter process. Solar cell efficiencies of 14.7% (front emitter) and 14.4% (rear emitter) were obtained on mc-Si; while more than 16% efficiency was demonstrated on monocrystalline wafers. Cell interconnection by conductive adhesive was developed and performs well.
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