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Title:
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Differences in reverse bias voltage behavior of n-type and p-type multicrystalline solar cells
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-10-2012
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ECN report number:
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Document type:
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ECN-M--12-025
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Conference Paper
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Number of pages:
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Full text:
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7
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Download PDF
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Presented at: Silicon PV Conference, Leuven, , 3-5 april 2012.
Abstract:
The use of n-type, instead of p-type, silicon wafers for the production of mc-Si solar cells has a clear effect on the pre-breakdown behavior under reverse bias conditions. In p-type solar cells, material related breakdown patterns that are commonly observed in luminescence and thermography images. These patterns do not appear in the investigated n-type mc-Si solar cells, at least not down to a reverse bias of -16V. To the best of our knowledge, this difference
between p-type and n-type mc-Si solar cells has not yet been described in literature before and could provide important information for the understanding of this type of wafer related breakdown.
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