ECN publication
Title:
Interdigitated back-contacted silicon heterojunction solar cells using semi-industrial processing equipment
 
Author(s):
 
Published by: Publication date:
ECN Solar Energy 14-6-2015
 
ECN report number: Document type:
ECN-M--15-027 Conference Paper
 
Number of pages: Full text:
4 Download PDF  

Abstract:
Interdigitated back-contacted a-Si:H/c-Si heterojunction solar cells were made using two different approaches for patterning the a-Si:H layers: screen-printing in combination with wet chemical etching and in-situ mechanical masking. Processing was restricted to semi-industrial, low cost processing equipment on 6” wafers, cut back after processing into nine smaller cells by laser. After active layer patterning, implied Voc values of over 700 mV were measured for both approaches and the best Jsc and Voc values on cell level were 39.7 mA/cm2 and 697 mV, respectively. Efficiencies over 21% are expected, when some metallization issues at the rear are solved.


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