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Title:
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PID and UVID resistant n-type solar cells and modules
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Author(s):
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Stodolny, M.K.; Janssen, G.J.M.; Aken, B.B. van; Tool, C.J.J.; Lamers, M.W.P.E.; Romijn, I.G.; Venema, P.; Renes, M.; Siarheyeva, O.; Granneman, E.; Wang, J.; Ma, J.; Cui, J.; Lang, F.; Hu, Z.; Loffler, J.
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Published by:
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Publication date:
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ECN
Solar Energy
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24-6-2016
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ECN report number:
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Document type:
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ECN-M--16-016
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Abstract:
In this paper we report on the high stability of our n-type front junction solar cells (n-PERT) exposed to potential-induced degradation (PID) and UV-induced degradation (UVID) conditions. These intrinsically stable n-Pasha cells enable PID- and UVID-free modules even with industrially low-cost standard EVA encapsulant, independent of system grounding and system voltage. Based on intentional modifications of the Boron emitter and/or the dielectric layer in the PID-free and UVID-free n-Pasha solar cells, we are able to replicate reported degradation effects and study the mechanisms behind it. A combination of altering the boron profile and the dielectric properties together with increasing the interface defect density Dit is detrimental for the stability. Applying our standard optimal B-diffusion and passivation scheme assure that the UV radiation and system voltage have virtually no effect on our n-Pasha cell and module performance.
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