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Title:
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Large area, high rate deposition of uc-Si by MicroWave PECVD
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Author(s):
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Soppe, W.J.; Devilee, C.; Muffler, H.J.; Gajovic, A.; Dubcek, P.; Gracin, D.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-10-2005
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ECN report number:
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Document type:
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ECN-RX--05-108
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Conference Paper
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Number of pages:
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Full text:
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2
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Download PDF
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Presented at: 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, Shanghai, China, 10-15 oktober 2005.
Abstract:
MicrowavePECVD has been applied to grow intrinsic microcrystalline (mc-Si ) and amorphous silicon
(a-Si ) layers for solar cell applications in a relatively low growth
rate regime (0.1 - 0.3 nm/s). In this growth rate regime
optically dense layers can be produced, which are entirely microcrystalline
for silane fractions less than 5 % and which are amorphous for
larger silane fractions. The best amorphous layers have an optical bandgap
of about 1.6 eV and a structure factor R* of about 0.1, Urbach
energy EU of about 55 meV and sph/sd
in the range of 5×104. Best microcrystalline layers, grown
at a silane fraction of about 5 %, have an Urbach energy of 107 meV
and sph/sd in the range of
5×102.
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