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Title:
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Almost 1% absolute efficiency increase in mc-Si solar cell manufacturing with simple adjustments to the processing sequence
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Author(s):
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Tool, C.J.J.; Koppes, M.; Weeber, A.W.; Fleuster, M.; van Straaten, B.H.M.
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Published by:
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Publication date:
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ECN
Solar Energy
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11-9-2006
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ECN report number:
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Document type:
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ECN-RX--06-028
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Conference Paper
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Number of pages:
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Full text:
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5
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Download PDF
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Presented at: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.
Abstract:
Due to the use of thinner and larger wafers, in-line belt diffusion becomes more commonly used in new production lines. In this paper two possible adjustments to the processing sequences with an in-line belt diffusion are discussed. Double-sided diffusion (applying phosphorous on both sides of the wafer) leads to a better gettering and a maximum absolute efficiency increase of 0.8%. The average absolute efficiency increase for double-sided diffusion is 0.5%. A simple surface cleaning before SiNx:H ARC deposition results in better surface passivation and an additional absolute efficiency gain of 0.3%. Both the experimental results and PC-1D modeling confirms that these efficiency gains are indeed independent and can be added, so an overall efficiency gain of nearly 1% absolute can be obtained.
Besides the efficiency gain, double-sided diffusion also results in a narrowing of the efficiency distribution.
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