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Title:
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Microwave PECVD of micro-crystalline silicon
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2002
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ECN report number:
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Document type:
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ECN-RX--02-019
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.
Abstract:
The deposition of micro-crystalline silicon with a new linear microwaveplasma source is investigated. Advantages of this plasma source are
the high depositions rates and the large area on which a homogeneous
deposition can be achieved. Since this source has not yet been applied
for depositions of micro-crystalline silicon before, we explored a large
parameter space in order to find optimum growth conditions. It is observed
that with this microwave source it is possible to grow micro-crystalline
layers at higher silane/hydrogen ratios and deposition rates than for
conventional RF PECVD. In this paper, structural properties of silicon
layers deposited by microwave assisted PECVD are discussed.
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