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ECN publication
Title:
A high throughput PECVD reactor for deposition of passivating SiN layers
 
Author(s):
Soppe, W.J.; Duijvelaar, B.G.; Schiermeier, S.E.A.; Weeber, A.W.; Steiner, A.; Schuurmans, F.M.
 
Published by: Publication date:
ECN Solar Energy 1-5-2000
 
ECN report number: Document type:
ECN-RX--00-021 Conference Paper
 
Number of pages: Full text:
4 Download PDF  

Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

Abstract:
A new high throughput PECVD reactor for deposition of passivating SiNlayers is presented. It is shown that the throughput of the reactor is easily upscalable to industrial demands of more than 1000 wafers/hr and that the deposited SiN layers have excellent surface- and bulk passivating properties. Solar cells with an efficiency of more than 14.5% have been made. 5 refs.


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