|
Title:
|
|
Microwave PECVD of Micro-Crystalline Silicon
|
|
|
|
Author(s):
|
|
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-4-2002
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--02-011
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
6
|
Download PDF
|
Presented at: 2002 MRS Spring Meeting, San Francisco, USA, 1-5 april 2002.
Abstract:
The deposition of micro-crystalline silicon by means of PECVD with a new linear microwave plasma source is investigated. This plasma source has successfully been introduced in the large scale production of multi-crystalline Si solar cells for the deposition of passivating silicon nitride layers. Advantages of this linear plasma source are the high deposition rates and the large area (up to 80 cm width, no length limitations) on which a homogeneous deposition can be achieved. Since this source has not been applied for deposition of micro-crystalline silicon before, we explored a large parameter space (substrate temperature, pressure, MW-power, gas flow rates), in order to find optimum growth conditions. It is observed that with this microwave source it is possible to grow micro-crystalline layers at significantly higher lane/hydrogen ratios and higher deposition rates than for conventional RF PECVD. In this paper, structural properties of the silicon layers, as investigated by Raman and FTIR spectroscopy, XRD and SEM measurements are discussed.
Back to List