ECN publication
High rate growth of micro-crystalline silicon by microwave-PECVD
Published by: Publication date:
ECN Solar Energy 1-5-2003
ECN report number: Document type:
ECN-RX--03-020 Conference Paper
Number of pages: Full text:
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Presented at: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.

A high rate deposition method for growth of c-Si is presented.The deposition method is based on plasma enhanced CVD, using a linear microwave source. Homogeneous depositions of c-Si over an area with a larger width than 40 cm, and with deposition rates of more than 1 nm/s are achieved, using H2 and SiH4 as precursor gases. Dilution with Ar helps to obtain a more stable plasma at low process pressures, but does not improve the crystallinity of the layers. c-Si is grown for SiH4/H2 ratios up to 0.2; for larger ratios the layers become amorphous. We varied the deposition temperature between 100ºC and 300ºC and were able to grow microcrystalline layers in the entire temperature range with growth rates larger than 0.6 nm/s. FTIR measurements show that the layers incorporate oxygen after deposition; this is due to porosity of the layers.

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