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ECN publication
Title:
Microwave PECVD of micro-crystalline silicon
 
Author(s):
Soppe, W.J.; Devilee, C.; Schiermeier, S.E.A.; Biebericher, A.C.W.; Donker, H.; Rath, J.K.
 
Published by: Publication date:
ECN Solar Energy 1-5-2002
 
ECN report number: Document type:
ECN-RX--02-019 Conference Paper
 
Number of pages: Full text:
4 Download PDF  

Presented at: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.

Abstract:
The deposition of micro-crystalline silicon with a new linear microwaveplasma source is investigated. Advantages of this plasma source are the high depositions rates and the large area on which a homogeneous deposition can be achieved. Since this source has not yet been applied for depositions of micro-crystalline silicon before, we explored a large parameter space in order to find optimum growth conditions. It is observed that with this microwave source it is possible to grow micro-crystalline layers at higher silane/hydrogen ratios and deposition rates than for conventional RF PECVD. In this paper, structural properties of silicon layers deposited by microwave assisted PECVD are discussed.


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