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Title:
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High rate growth of micro-crystalline silicon by microwave-PECVD
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2003
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ECN report number:
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Document type:
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ECN-RX--03-020
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.
Abstract:
A high rate deposition method for growth of c-Si is presented.The deposition method is based on plasma enhanced CVD, using a linear
microwave source. Homogeneous depositions of c-Si over an area
with a larger width than 40 cm, and with deposition rates of more than
1 nm/s are achieved, using H2 and SiH4 as precursor gases. Dilution
with Ar helps to obtain a more stable plasma at low process pressures,
but does not improve the crystallinity of the layers. c-Si is
grown for SiH4/H2 ratios up to 0.2; for larger ratios the layers become
amorphous. We varied the deposition temperature between 100ºC and 300ºC
and were able to grow microcrystalline layers in the entire temperature
range with growth rates larger than 0.6 nm/s. FTIR measurements show
that the layers incorporate oxygen after deposition; this is due to
porosity of the layers.
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