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ECN publication
Title:
MW plasma enhanced CVD of intrinsic Si for thin film solar cells
 
Author(s):
Aken, B.B. van; Leegwater, H.; Dörenkämper, M.S.; Devilee, C.; Loffler, J.; Heijna, M.; Soppe, W.J.
 
Published by: Publication date:
ECN Solar Energy 14-3-2008
 
ECN report number: Document type:
ECN-M--08-024 Conference Paper
 
Number of pages: Full text:
7 Download PDF  

Presented at: MRS Spring Meeting, San Francisco, USA, 25-27 maart 2008.

Abstract:
The aim of the thin film silicon PV research program at ECN is the development of highthroughput production technology for high efficiency, microcrystalline and amorphous thin film silicon photovoltaics (PV) on flexible substrates. For this purpose, a roll-to-roll system has been designed and constructed, consisting of three deposition chambers for the continuous deposition of n-type, intrinsic and p-type Si layer. In this paper, we will present optical and electrical characterisation of device quality intrinsic Si layers, deposited with Microwave (MW) plasma enhanced chemical vapour deposition (PECVD), with a special focus on UV-reflection spectroscopy (UVRS). UVRS can be used to determine the crystallinity in very thin silicon layer and is interesting as a possible inline tool for layer quality assessment and crystallinity control.


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